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SSC8030GQ4 - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch PC/NB DCDC conversion Pin configuration Bottom View Package Information SSC-1V0

Features

  • s.
  • VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A.
  • General.

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Datasheet preview – SSC8030GQ4

Datasheet Details

Part number SSC8030GQ4
Manufacturer AFSEMI
File Size 320.98 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8030GQ4 Datasheet
Additional preview pages of the SSC8030GQ4 datasheet.

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Full PDF Text Transcription

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SSC8030GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Bottom View  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/4 Analog Future SSC8030GQ4  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Repetitive avalanche energy L=0.
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