SSC8030GQ4
SSC8030GQ4 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 30V
VGS ±20V
RDSon TYP 8 m R@10V 10m R@4V5
ID 19A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- PC/NB
- DCDC conversion
Pin configuration
Bottom View
- Package Information
SSC-1V0
Package: DFN3X3 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1)
Repetitive avalanche energy L=0.1m H C
Storage Junction Temperature Range
VDSS VGSS
ID IDM PD EAS TJ, TSTG
N-channel 30 ±20 19 90 2 30
-55 to +150
Unit V V A A W m J °C
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter...
