SSC8030GS1 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch PC/NB DCDC conversion Pin configuration Top View Package Information ⑧ ⑦ ⑥⑤ ①② ③④

Key Features

s.
VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A.
General.

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SSC8030GS1 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8030GS1
Manufacturer	AFSEMI
File Size	184.25 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8030GS1 Datasheet

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SSC8030GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.