SSC8030GS1
SSC8030GS1 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 30V
VGS ±20V
RDSon TYP 8.5m R@10V 10.5m R@4V5
ID 12A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- PC/NB
- DCDC conversion
Pin configuration
Top View
- Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-V1.0 http://.afsemi. h // S i P
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 30 ±20 12 50 2
-55 to +150
Unit V V A A W °C
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Paramete...
