SSC8030GS1 - N-Channel Enhancement Mode MOSFET

SSC8030GS1 Datasheet Preview — Preview of SSC8030GS1 PDF

Datasheet Details

Part number	SSC8030GS1
Manufacturer	AFSEMI
File Size	184.25 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8030GS1-AFSEMI.pdf

SSC8030GS1 Product details

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Load Switch PC/NB DCDC conversion Pin configuration Top View Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8030GS1 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltag

Features

s.
VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 12A.
General.

📁 SSC8030GS1 Similar Datasheet

SSC8033GS3 - P-Channel Enhancement Mode MOSFET (SPIRIT-SEMI)
SSC8035GS6 - P-Channel MOSFET (VBsemi)
SSC-AM101 - CHIP LED DEVICE (Seoul Semiconductor)
SSC-AWT722 - TOP LED DEVICE (Seoul Semiconductor)
SSC-CMX2 - Clip Addressable Output Module (Firesense)
SSC-D3232SL-88 - LED DOT MATRIX (Seoul Semiconductor)
SSC-ERT801 - TOP LED DEVICE (Seoul Semiconductor)
SSC-FAT801 - TOP LED DEVICE (Seoul Semiconductor)

Other Datasheets by AFSEMI

SSC8030GN2 - N-Channel Enhancement Mode MOSFET
SSC8030GQ4 - N-Channel Enhancement Mode MOSFET
SSC8030GT4 - N-Channel Enhancement Mode MOSFET
SSC8030GT8 - N-Channel Enhancement Mode MOSFET
SSC8032GT4 - N-Channel Enhancement Mode MOSFET
SSC8033GS1 - P-Channel Enhancement Mode MOSFET

Published: Dec 15, 2018 |