SSC8037GT4 - Dual P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -15A.

SSC8037GT4 dual p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8037GT4
Manufacturer	AFSEMI
File Size	158.45 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Datasheet	SSC8037GT4 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8037GT4 Dual P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 39mR@-4V5 ID -15A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information S D G SSC-1V0 Unit: mm TO220 http://www.afsemi.