AGM18N10I datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

BVDSS RDSON ID 100V 16mΩ 40A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switchi.

Application

* Features BVDSS RDSON ID 100V 16mΩ 40A
* Advance high cell density Trench technology
* Low RDS(ON) .

Description

The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 10.

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