AGM30P25D datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low Thermal resistance
*1.

Application

* Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
*Low.

Description

The AGM30P25D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
* Features
* Advance high cell density Trench .

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