AGM30P25S mosfet equivalent, mosfet.
SOP8 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low.
* Features
SOP8 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimi.
The AGM30P25S combines advanced trench
Product Summary
MOSFET technology with a low resistance
package to provide extremely low RDS(ON) .
BVDSS
RDSON
ID
This device is ideal for load switch and battery
-30V
20mΩ
-8A
protection applications.
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