AGM403A1 mosfet equivalent, mosfet.
* Advance high cell density Trench technology
PRPAK5X6 Pin Configuration
*Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*.
BVDSS 40V
RDSON 2.7mΩ
ID 120A
* Features
* Advance high cell density Trench technology
PRPAK5X6 Pin Config.
The AGM403A1 combines advanced trench
Product Summary
MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
BVDSS 40V
RDSON 2.7mΩ
ID 120A
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