AGM403Q datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

PDFN5*6 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching

Application

40V 2.8mΩ 85A
* Features PDFN5*6 Pin Configuration
* Advance high cell density Trench technology
* L.

Description

The AGM403Q combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 2.8mΩ 85A .

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