AGM412MA datasheet, mosfet equivalent, AGMSEMI

datasheet Download (Size : 624.66KB)

1.0 ·

Features and benefits

BVDSS RDSON ID 40V 10mΩ 30A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switchin.

Application

* Features BVDSS RDSON ID 40V 10mΩ 30A
* Advance high cell density Trench technology
* Low RDS(ON) t.

Description

The AGM412MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 40V.

Image gallery