AGM412MAP datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

BVDSS RDSON ID 40V 13mΩ 22A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switchin.

Application

* Features BVDSS RDSON ID 40V 13mΩ 22A
* Advance high cell density Trench technology
* Low RDS(ON) t.

Description

The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 40.

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