AGM612AP datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

60V 11mΩ 50A PDFN3.3*3.3 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for.

Application

* Features 60V 11mΩ 50A PDFN3.3*3.3 Pin Configuration
* Advance high cell density Trench technology
*.

Description

The AGM612AP combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery protection applications.
* Features 6.

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