AGM612MNA datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

* Advance high cell density Trench technology PDFN5*6 Pin Configuration
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
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Application

60V 11mΩ 50A
* Features
* Advance high cell density Trench technology PDFN5*6 Pin Configuration
* Lo.

Description

The AGM612MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 60V 11mΩ 50A .

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