AGM635E mosfet equivalent, mosfet.
SOT-23-3 Pin Configuration
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
60V
32mΩ
5A
* Features
SOT-23-3 Pin Configuration
* Advance high cell density Trench technology
* Lo.
The AGM635E combines advanced trench MOSFET
Product Summary
technology with a low resistance package to provide
extremely low RDS(ON) .
BVDSS
RDSON
ID
This device is ideal for load switch and battery protection applications.
60V
32mΩ
5A
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