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2SC3133 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications.

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Datasheet Details

Part number 2SC3133
Manufacturer ASI
File Size 82.15 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2SC3133 Datasheet

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Full PDF Text Transcription

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2SC3133 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC 6.0 A 25 V 60 V 20 W @ TC = 25 °C -65 °C to +150 °C 6.25 °C/W 1 = BASE 3 = COLLECTOR 2 = EMITTER TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE PO ηC IC = 10 mA TC = 25 °C TEST CONDITIONS IC = 5.0 mA IE = 1.0 mA VCB = 30 V VEB = 4.0 V VCE = 12 V VCC = 12 V IC = 10 mA PIN = 0.5 W f = 27 MHz MINIMUM TYPICAL MAXIMUM 25 60 5.0 500 500 10 13 60 50 16 70 180 UNITS V V V µA µA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
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