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MRF5812 - NPN Silicon RF Microwave Transistor

Description

The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features

  • Low Noise.
  • 2.5 dB @ 500 MHz.
  • Ftau.
  • 5.0 GHz @ 10 V, 75 mA.
  • Cost Effective SO-8 package.

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Datasheet Details

Part number MRF5812
Manufacturer ASI
File Size 51.44 KB
Description NPN Silicon RF Microwave Transistor
Datasheet download datasheet MRF5812 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21| TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 0.1 mA VCB = 15 V VCE = 2.0 V VCE = 5.0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 30 15 2.5 0.1 0.1 50 1.4 5.0 2.0 13 3.0 200 2.0 UNITS V V V mA mA --pF GHz dB % dB dB dB VCE = 10 V IC = 50 mA f = 500 MHz 15.5 17.
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