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AT49BV001ANT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

This page provides the datasheet information for the AT49BV001ANT, a member of the AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory family.

Description

The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Features

  • Single Supply for Read and Write: 2.7 to 3.6V.
  • Fast Read Access Time.
  • 55 ns.
  • Internal Program Control and Timer.
  • Sector Architecture.
  • One 16K Bytes Boot Block with Programming Lockout.
  • Two 8K Bytes Parameter Blocks.
  • Two Main Memory Blocks (32K Bytes, 64K Bytes).
  • Fast Erase Cycle Time.
  • 3 Seconds.
  • Byte-by-Byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protection.
  • DATA.

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Other Datasheets by ATMEL
  • AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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  • AT49BV001N - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001NT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001T - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV002 - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Full PDF Text Transcription

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Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (32K Bytes, 64K Bytes) • Fast Erase Cycle Time – 3 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.
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