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AT49BV008A - 8-megabit (1M x 8/512K x 16) Flash Memory

Description

The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.

Features

  • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Word (16K Bytes) Boot Block with Programming Lockout.
  • Two 4K Word (8K Bytes) Parameter Blocks.
  • One 496K Word (992K Bytes) Main Memory Array Block.
  • Fast Sector Erase Time.
  • 10 seconds.
  • Byte-by-byte or Word-by-word Programming.
  • 3.

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Full PDF Text Transcription

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.
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