AT49BV008AT - 8-megabit (1M x 8/512K x 16) Flash Memory
Atmel (now Microchip Technology)
Download the AT49BV008AT datasheet PDF.
This datasheet also covers the AT49BV008A variant, as both devices belong to the same 8-megabit (1m x 8/512k x 16) flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.
Key Features
Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
Fast Read Access Time.
70 ns.
Internal Erase/Program Control.
Sector Architecture.
One 8K Word (16K Bytes) Boot Block with Programming Lockout.
Two 4K Word (8K Bytes) Parameter Blocks.
One 496K Word (992K Bytes) Main Memory Array Block.
Full PDF Text Transcription for AT49BV008AT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AT49BV008AT. For precise diagrams, and layout, please refer to the original PDF.
Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architectur...
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ess Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits
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AT49BV008AT Datasheet
