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AT49BV004 Datasheet 4-megabit (512k X 8/256k X 16) CMOS Flash Memory

Manufacturer: Atmel (now Microchip Technology)

General Description

The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

When deselected, the CMOS standby current is less than 50 µA.

Key Features

  • 2.7V to 3.6V Read/Write Operation.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 4K Words (8K bytes) Parameter Blocks.
  • One 240K Words (480K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical.
  • Hardware Data Protection.
  • DA.

More Datasheets from Atmel (now Microchip Technology)

Part Number Description
AT49BV004T 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001ANT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001N 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001NT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001T 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV002 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

AT49BV004 Distributor