AT49BV004T
Features
- 2.7V to 3.6V Read/Write Operation
- Fast Read Access Time
- 120 ns
- Internal Erase/Program Control
- Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 4K Words (8K bytes) Parameter Blocks
- One 240K Words (480K bytes) Main Memory Array Block
- Fast Sector Erase Time
- 10 seconds
- Byte-by-Byte or Word-By-Word Programming
- 30 µs Typical
- Hardware Data Protection
- DATA Polling For End Of Program Detection
- Low-Power Dissipation
- 25 m A Active Current
- 50 µA CMOS Standby Current
- Typical 10,000 Write Cycles
Description
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 m W at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.
The device...
