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AT49BV002N - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Download the AT49BV002N datasheet PDF (AT49LV002T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 2-megabit 256k x 8 single 2.7-volt battery-voltage flash memory.

Description

The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.

Its 2 megabits of memory is organized as 262,144 words by 8 bits.

Features

  • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Program Control and Timer.
  • Sector Architecture.
  • One 16K Bytes Boot Block with Programming Lockout.
  • Two 8K Bytes Parameter Blocks.
  • Two Main Memory Blocks (96K, 128K Bytes).
  • Fast Erase Cycle Time.
  • 10 Seconds.
  • Byte-by-Byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49LV002T_ATMELCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ATMEL
  • AT49BV002NT - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
  • AT49BV002 - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
  • AT49BV002T - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
  • AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001A - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AN - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001ANT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
  • AT49BV001AT - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Full PDF Text Transcription

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (96K, 128K Bytes) • Fast Erase Cycle Time – 10 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits.
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