AT49BV002NT
Features
- Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV)
- Fast Read Access Time
- 70 ns
- Internal Program Control and Timer
- Sector Architecture
- One 16K Bytes Boot Block with Programming Lockout
- Two 8K Bytes Parameter Blocks
- Two Main Memory Blocks (96K, 128K Bytes)
- Fast Erase Cycle Time
- 10 Seconds
- Byte-by-Byte Programming
- 30 µs/Byte Typical
- Hardware Data Protection
- DATA Polling for End of Program Detection
- Low Power Dissipation
- 25 m A Active Current
- 50 µA CMOS Standby Current
- Typical 10,000 Write Cycles
Description
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 m W over the mercial temperature range.
I/O1 14 I/O2 15 GND 16 I/O3 17 I/O4 18 I/O5 19 I/O6 20
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