AT49BV008A Overview
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby.
AT49BV008A Key Features
- Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
- Fast Read Access Time
- Internal Erase/Program Control
- Sector Architecture
- One 8K Word (16K Bytes) Boot Block with Programming Lockout
- Two 4K Word (8K Bytes) Parameter Blocks
- One 496K Word (992K Bytes) Main Memory Array Block
- Fast Sector Erase Time
- 10 seconds
- Byte-by-byte or Word-by-word Programming