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AT49BV010 - 1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

This page provides the datasheet information for the AT49BV010, a member of the AT49HBV010 1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory family.

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each.

Features

  • Single Supply Voltage, Range 2.7V to 3.6V.
  • Single Supply for Read and Write.
  • Fast Read Access Time - 55 ns.
  • Internal Program Control and Timer.
  • 8K bytes Boot Block With Lockout.
  • Fast Erase Cycle Time - 10 seconds.
  • Byte By Byte Programming - 30 µs/Byte typical.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.
  • 50 µA CMOS Stand.

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Full PDF Text Transcription

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AT49(H)BV/(H)LV01 Features • Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Fast Read Access Time - 55 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte By Byte Programming - 30 µs/Byte typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range.
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