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AT49BV080 - 8-Megabit (1M x 8) Single 2.7-volt Battery-Voltage Flash Memory

Description

The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices.

megabits of memory are organized as 1,024,576 words by 8 bits.

Features

  • Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time - 120 ns.
  • Internal Program Control and Timer.
  • 16K Bytes Boot Block With Lockout.
  • Fast Erase Cycle Time - 10 seconds.
  • Byte-By-Byte Programming - 30 µs/Byte Typical.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.
  • 50 µA CMOS Standby Current.

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Full PDF Text Transcription

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Features • Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K Bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte-By-Byte Programming - 30 µs/Byte Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 14 mm CBGA Description The AT49BV/LV080(T) are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits.
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