AT49BV1604 Key Features
- 2.7V to 3.3V Read/Write
- Access Time
- Sector Erase Architecture
- Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
- Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
- Two 16K Word (32K Byte) Sectors with Individual Write Lockout
- Fast Word Program Time
- Fast Sector Erase Time
- 200 ms
- Dual Plane Organization, Permitting Concurrent Read while Program/Erase