Download AT49BV1614A Datasheet PDF
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AT49BV1614A Key Features

  • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
  • Access Time
  • Sector Erase Architecture
  • Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
  • Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
  • Fast Word Program Time
  • Fast Sector Erase Time
  • 300 ms
  • Dual-plane Organization, Permitting Concurrent Read while Program/Erase
  • Erase Suspend Capability

AT49BV1614A Description

Features Single Voltage Read/Write Operation: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation 30 mA Active 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Accelerated Program/Erase Operations RESET...