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AT49BV2048A - 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory

This page provides the datasheet information for the AT49BV2048A, a member of the AT49LV2048A 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory family.

Description

The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 67 mW at 2.7V read.

Features

  • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Word (16K Bytes) Boot Block with Programming Lockout.
  • Two 4K Word (8K Bytes) Parameter Blocks.
  • One 112K Word (224K Bytes) Main Memory Array Block.
  • Fast Sector Erase Time.
  • 10 Seconds.
  • Byte-by-byte or Word-by-word Programming.
  • 3.

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Datasheet preview – AT49BV2048A

Datasheet Details

Part number AT49BV2048A
Manufacturer Atmel (now Microchip Technology)
File Size 263.34 KB
Description 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
Datasheet download datasheet AT49BV2048A Datasheet
Additional preview pages of the AT49BV2048A datasheet.

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Full PDF Text Transcription

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control • Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 112K Word (224K Bytes) Main Memory Array Block • Fast Sector Erase Time – 10 Seconds • Byte-by-byte or Word-by-word Programming – 30 µs Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each.
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