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AT49LV8192AT Key Features

  • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
  • Fast Read Access Time
  • Internal Erase/Program Control
  • Sector Architecture
  • One 8K Word (16K Bytes) Boot Block with Programming Lockout
  • Two 4K Word (8K Bytes) Parameter Blocks
  • One 496K Word (992K Bytes) Main Memory Array Block
  • Fast Sector Erase Time
  • 10 seconds
  • Byte-by-byte or Word-by-word Programming

Related Atmel Datasheets

Part Number Description
AT49LV8192A 8-megabit (1M x 8/512K x 16) Flash Memory
AT49LV8192 8-Megabit (512K x 16) CMOS Flash Memory
AT49LV8192T 8-Megabit (512K x 16) CMOS Flash Memory
AT49LV8011 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49LV8011T 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

AT49LV8192AT Description

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby.