49F010 Datasheet | Atmel

Features - - - - - - - - - - Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By Byte Programming - 10 µs/Byte Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 30 m A Active Current - 100 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns (HF version) with a power dissipation of just 165 m W over the mercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. To allow for simple in-system reprogrammability, the AT49F010/HF010 does not require high input voltages for programming. Five-volt-only mands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte pro- 1-Megabit (128K x 8) 5-volt Only CMOS Flash Memory AT49F010 AT49HF010 AT49F010/HF010 Pin Configurations Pin Name A0 - A16 CE OE WE Function Addresses Chip Enable Output Enable Write Enable DIP Top View (continued) I/O0 - I/O7 Data Inputs/Outputs NC No Connect PLCC Top View TSOP Top View Type 1 0852AX- 5/97 gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. The optional 8K bytes boot block section includes a reprogramming write lock out feature to...