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AT49BV6416C - Flash Memory

Description

The AT49BV6416C(T) is a 2.7-volt 64-megabit Flash memory.

The memory is divided into multiple sectors and planes for erase operations.

The device can be read or reprogrammed off a single 2.7V power supply, making it ideally suited for In-System programming.

Features

  • 64-megabit (4M x 16) Flash Memory.
  • 2.7V - 3.6V Read/Write.
  • High Performance.
  • Asynchronous Access Time.
  • 70 ns.
  • Page Mode Read Time.
  • 20 ns Sector Erase Architecture.
  • Eight 4K Word Sectors with Individual Write Lockout.
  • One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors.
  • 700 ms; 4K Word Sectors.
  • 200 ms Four Plane Organization, Perm.

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📁 Similar Datasheet

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Other Datasheets by Atmel (Microchip)

Part Number Description
AT49BV6416CT Flash Memory
AT49BV6416 Flash Memory
AT49BV6416T Flash Memory
AT49BV640D 64-megabit (4M x 16) 3-volt Only Flash Memory
AT49BV640DT 64-megabit (4M x 16) 3-volt Only Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Features • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.
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