Datasheet Summary
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Features
- 64-megabit (4M x 16) Flash Memory
- 2.7V
- 3.6V Read/Write
- High Performance
- Asynchronous Access Time
- 70 ns
- Page Mode Read Time
- 20 ns Sector Erase Architecture
- Eight 4K Word Sectors with Individual Write Lockout
- One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors
- 700 ms; 4K Word Sectors
- 200 ms Four Plane Organization, Permitting Concurrent Read in Any of the Three Planes not Being Programmed/Erased
- Memory Plane A: 16M Memory Including Eight 4K Word Sectors
- Memory Plane B: 16M Memory Consisting of 32K Word Sectors
- Memory Plane C: 16M Memory Consisting of 32K Word...