STK7006P semiconductor equivalent, advanced power mosfet semiconductor.
* High Voltage: BVDSS=60V(Min.)
* Low Crss : Crss=84pF(Typ.)
* Low gate charge : Qg=26.7nC(Typ.)
* Low RDS(on) :RDS(on)=16mΩ(Max.)
Ordering Information
T.
Features
* High Voltage: BVDSS=60V(Min.)
* Low Crss : Crss=84pF(Typ.)
* Low gate charge : Qg=26.7nC(Typ.)
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