SUN04A60F Key Features
- Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)
- Low gate charge: Qg=12nC (Typ.)
- Low reverse transfer capacitance: Crss=6.3pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested
- Part: SUN04A60F
- Description: New Generation N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 465.82 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SUN04A65F | New Generation N-Ch Power MOSFET |
| SUN04A65IS | New Generation N-Ch Power MOSFET |
| SUN02A60F | New Generation N-Ch Power MOSFET |
| SUN0550D | Advanced N-Ch Power MOSFET |
| SUN0550F | Advanced N-Ch Power MOSFET |