SUN09A65F Key Features
- Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)
- Low gate charge: Qg=33nC (Typ.)
- Low reverse transfer capacitance: Crss=13pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested
| Part Number | Description |
|---|---|
| SUN02A60F | New Generation N-Ch Power MOSFET |
| SUN04A60F | New Generation N-Ch Power MOSFET |
| SUN04A65F | New Generation N-Ch Power MOSFET |
| SUN04A65IS | New Generation N-Ch Power MOSFET |
| SUN0550D | Advanced N-Ch Power MOSFET |