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VMMK-2403 Datasheet Preview

VMMK-2403 Datasheet

2 to 4 GHz GaAs High Linearity LNA

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VMMK-2403
2 to 4 GHz GaAs High Linearity LNA in Wafer Level Package
Data Sheet
Description
Avago’s VMMK-2403 is an easy-to-use, high linearity low
noise amplifier in a miniaturized wafer level package
(WLP). The low noise and unconditionally stable perfor-
mance makes this amplifier ideal as a primary or subse-
quent gain block of an RF receiver in applications from
2–4GHz. A 3V, 38mA power supply is required for optimal
performance.
This amplifier is fabricated with enhancement E-pHEMT
technology and industry leading revolutionary wafer level
package. The GaAsCap wafer level sub-miniature leadless
package is small and ultra thin yet can be handled and
placed with standard 0402 pick and place assembly. This
product is easy to use since it requires only positive DC
voltages for bias and no matching coefficients are required
for impedance matching to 50 Ω systems.
WLP 0402, 1mm x 0.5mm x 0.25 mm
FY
Features
1 x 0.5 mm Surface Mount Package
Ultrathin (0.25mm)
Unconditionally Stable
50Ohm Input and Output Match
RoHS6 + Halogen Free
Specifications (Vdd = 3.0V, Idd = 37mA)
Output IP3: 28dBm
Small-Signal Gain: 16dB
Noise Figure: 1.7dB
Applications
2.4 GHz, 3.5GHz WLAN and WiMax notebook computer,
access point and mobile wireless applications
802.16 & 802.20 BWA systems
Radar, radio and ECM systems
Pin Connections (Top View)
Input
FY
Output
/ Vdd
Input
Amp
Note:
“F” = Device Code
“Y” = Month Code
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50V
ESD Human Body Model = 125V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.




AVAGO

VMMK-2403 Datasheet Preview

VMMK-2403 Datasheet

2 to 4 GHz GaAs High Linearity LNA

No Preview Available !

Table 1. Absolute Maximum Ratings [1]
Sym Parameters/Condition
Unit
Vd Supply Voltage (RF Output) [2]
V
Id Device Current [2]
mA
Pin, max
CW RF Input Power (RF Input) [3]
dBm
Pdiss Total Power Dissipation
mW
Tch Max channel temperature
°C
θjc Thermal Resistance [4]
°C/W
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device.
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Table 2. DC and RF Specifications
TA = 25°C, Frequency = 3 GHz, Vd = 3V, Zin = Zout = 50(unless otherwise specified)
Sym Parameters/Condition
Id Device Current
NF [1,2]
Noise Figure
Ga [1,2]
Associated Gain
OIP3 [1,2,3]
Output 3rd Order Intercept
P-1dB[1,2]
Output Power at 1dB
Gain Compression
IRL [1,2]
Input Return Loss
ORL [1,2]
Output Return Loss
Notes:
1. Losses of test systems have been de-embedded from final data
2. Measure Data obtained from wafer-probing
3. OIP3 test condition: F1=3.0GHz, F2=3.01GHz, Pin=-20dBm
Unit
mA
dB
dB
dBm
dBm
dB
dB
Minimum
30
14
+26
Typ.
37
1.7
16
+27.8
+16.5
-12
-12
Absolute Max
5
60
+20
300
150
160
Maximum
45
2.2
17
2


Part Number VMMK-2403
Description 2 to 4 GHz GaAs High Linearity LNA
Maker AVAGO
Total Page 11 Pages
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