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VMMK-2503 Datasheet Preview

VMMK-2503 Datasheet

1 to 12 GHz GaAs Wideband Amplifier

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VMMK-2503
1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
Data Sheet
Description
Avago’s VMMK-2503 is an easy-to-use broadband, high
linearity amplifier in a miniaturized wafer level package
(WLP). The wide band and unconditionally stable perfor-
mance makes this amplifier suitable as a gain block or a
transmitter driver in many applications from 1–12GHz. A 5V,
65mA power supply is required for optimal performance.
This amplifier is fabricated with enhancement E-pHEMT
technology and industry leading wafer level package. The
GaAsCap wafer level package is small and ultra thin yet
can be handled and placed with standard 0402 pick and
place assembly. This product is easy to use since it requires
only positive DC voltages for bias and no matching coef-
ficients are required for impedance matching to 50 :
systems.
WLP 0402, 1mm x 0.5mm x 0.25 mm
GY
Pin Connections (Top View)
Features
x 1 x 0.5 mm Surface Mount Package
x Ultrathin (0.25mm)
x Unconditionally Stable
x Ultrawide Bandwidth
x Gain Block or Driver Amplifier
x RoHS6 + Halogen Free
Typical Performance (Vdd = 5.0V, Idd = 65mA)
x Output IP3: 27dBm
x Small-Signal Gain: 13.5dB
x Noise Figure: 3.4dB
Applications
x 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
applications
x 802.16 & 802.20 BWA systems
x Radar, radio and ECM systems
x UWB
Input GY
Output / Vdd
Input
Amp
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
“G” = Device Code
“Y” = Month Code




AVAGO

VMMK-2503 Datasheet Preview

VMMK-2503 Datasheet

1 to 12 GHz GaAs Wideband Amplifier

No Preview Available !

Table 1. Absolute Maximum Ratings [1]
Sym Parameters/Condition
Vd Supply Voltage (RF Output) [2]
Id Device Current [2]
Pin, max
Pdiss
Tch
CW RF Input Power (RF Input) [3]
Total Power Dissipation
Max channel temperature
TSTG Storage Temperature
Tjc Thermal Resistance [4]
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Unit
V
mA
dBm
mW
°C
°C
°C/W
Absolute Max
6
120
+20
720
150
150
140
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 6 GHz, Vd = 5V, Id = 65mA, Zin = Zout = 50: (unless otherwise specified)
Sym Parameters/Condition
Id Device Current
NF[1,2]
Noise Figure
Ga [1,2]
Associated Gain
OIP3 [1,2,3]
Output 3rd Order Intercept
P-1dB[1,2]
Output Power at 1dB
Gain Compression
IRL [1,2]
Input Return Loss
ORL [1,2]
Output Return Loss
Notes:
1. Losses of test systems have been de-embedded from final data
2. Measure Data obtained from wafer-probing
3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm
Unit
mA
dB
dB
dBm
dBm
dB
dB
Minimum
12.5
Typ.
68
3.04
13.5
+27
+17
-14
-20
Maximum
88
4.1
18
2


Part Number VMMK-2503
Description 1 to 12 GHz GaAs Wideband Amplifier
Maker AVAGO
Total Page 11 Pages
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