AM1010N Datasheet Text
AM1010N 100V N-Channel MOSFET
GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features
1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability
PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by:
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AM1010N
ORDER/MARKING INFORMATION Order Information
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AM1010N X X
Package Type Packing E: SOT223-3L A : Taping
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