1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN ASSIGNMENT The package.

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES 1.0A, 100V, RDS(on.

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

AM1010

AM1010-G

AM101

AM1011-070

AM1011-075

AM1011-300

AM1011-400

AM1011-500

AM100

AM100-G

AM1000

AM1001

AM1001-7R