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AP02N90J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP02N90J datasheet PDF. This datasheet also covers the AP02N90H variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP02N90H-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AP02N90J (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP02N90J. For precise diagrams, and layout, please refer to the original PDF.

AP02N90H/J Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G N-CHANNEL ENHANCE...

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t Low On-resistance Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.2£[ 1.9A Description S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications.