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AP02N90JB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP02N90JB
Manufacturer Advanced Power Electronics
File Size 61.00 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N90JB Datasheet
Additional preview pages of the AP02N90JB datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP02N90JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement D ▼ RoHS Compliant & Halogen-Free G Description S AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 900V 7.2Ω 1.9A GDS TO-251S Absolute Maximum Ratings@Tj=25oC.
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