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AP02N90H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP02N90H
Manufacturer Advanced Power Electronics
File Size 75.72 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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www.DataSheet4U.com AP02N90H/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G D BVDSS RDS(ON) ID 900V 7.2£[ 1.9A Description S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications.
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