Datasheet4U Logo Datasheet4U.com

AP02N90J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP02N90J, a member of the AP02N90H N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP02N90J

Datasheet Details

Part number AP02N90J
Manufacturer Advanced Power Electronics
File Size 40.26 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP02N90J Datasheet
Additional preview pages of the AP02N90J datasheet.

📁 Similar Datasheet

  • AP02N70EJ-HF - N-Channel 700V Power MOSFET (VBsemi)
  • AP0202AT - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP01 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0101 - High-Dynamic Range (HDR) Image Signal Processor (Aptina)
  • AP0101CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)
  • AP0116 - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NA - 8 Channel Power MOSFET (Supertex Inc)
  • AP0116NB - 8 Channel Power MOSFET (Supertex Inc)
Other Datasheets by Advanced Power Electronics
  • AP02N90J-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90J-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90JB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90H-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90H-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP02N90I-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP02N90H/J Pb Free Plating Product Advanced Power Electronics Corp. ¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.2£[ 1.9A Description S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications.
Published: |