Datasheet Details
| Part number | AP09N20BGI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 87.30 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09N20BGI-HF Download (PDF) |
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Overview: AP09N20BGI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.
| Part number | AP09N20BGI-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 87.30 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09N20BGI-HF Download (PDF) |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 +20 7.8 5 20 31.3 1.92 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201011081 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N20BGI-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=160V, VGS=0V VGS= +20V, VDS=0V ID=5A VDS=160V VGS=4.5V VDD=100V ID=5A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Min.
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