AP09N20H Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP09N20H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP09N20H, a member of the AP09N20J N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP09N20H
Manufacturer	Advanced Power Electronics
File Size	103.75 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP09N20H Datasheet
Additional preview pages of the AP09N20H datasheet.

📁 Similar Datasheet

AP01 - 8 Channel Power MOSFET (Supertex Inc)

AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (Aptina)

AP0100CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)

AP0101 - High-Dynamic Range (HDR) Image Signal Processor (Aptina)

AP0101CS - High-Dynamic Range (HDR) Image Signal Processor (ON Semiconductor)

AP0116 - 8 Channel Power MOSFET (Supertex Inc)

AP0116NA - 8 Channel Power MOSFET (Supertex Inc)

AP0116NB - 8 Channel Power MOSFET (Supertex Inc)

AP0116ND - 8 Channel Power MOSFET (Supertex Inc)

AP0116WG - 8 Channel Power MOSFET (Supertex Inc)

Full PDF Text Transcription

Click to expand full text

AP09N20H/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 380mΩ 8.6A Description S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lowprofile applications.

Published: Aug 20, 2013 |