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AP09N20BGS-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP09N20BGS-HF
Manufacturer Advanced Power Electronics
File Size 86.92 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP09N20BGS-HF Datasheet
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Full PDF Text Transcription

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AP09N20BGS-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 460mΩ 7.8A S Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
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