Datasheet Details
| Part number | AP09T10GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 78.36 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09T10GP-HF Download (PDF) |
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| Part number | AP09T10GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 78.36 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP09T10GP-HF Download (PDF) |
|
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power G D applications and suited for low voltage applications such as DC/DC S converters.
TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 4.4 2.8 12 12.5 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 10 62 Units ℃/W ℃/W 1 201110071 Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09T10GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=1.5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VGS=+20V, VDS=
AP09T10GP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 300mΩ 4.
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