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AP0903GH Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

BVDSS RDS(ON) ID 30V 9mΩ 51A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 ±20 51 32.5 200 39 -55 to 150 -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 3.2 62.5 Units V V A A A W ℃ ℃ Units ℃/W ℃/W Data & specifications subject to change without notice 1 200812112 AP0903GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP0903GH RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G.