AP1332EU Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 ±6 600 470 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V m A m A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 360 Unit ℃/W .. Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 850 1.2 1 10 ±10 2 60 Unit V V/℃ mΩ mΩ V S u A u A u A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A Static Drain-Source On-Resistance VGS=4.5V, ID=600m A VGS=2.5V, ID=400m A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250u A VDS=5V, ID=600m A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±6V ID=600m A VDS=16V VGS=4.5V VDS=10V ID=600m A RG=3.3Ω,VGS=5V RD=16.7Ω VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Forward On Voltage Test Conditions IS=300m A, VGS=0V Min. - Typ. - Max. 1.2 Unit V Notes: 1.Pulse width limited by Max. junction temperature....