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Advanced Power Electronics

AP1332EU Datasheet Preview

AP1332EU Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP1332EU
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Gate Drive
Small Package Outline
2KV ESD Rating(Per MIL-STD-883D)
D
Description
SOT-323 G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
600mΩ
600mA
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
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Rating
20
±6
600
470
2.5
0.35
0.003
-55 to 150
-55 to 150
Unit
V
V
mA
mA
A
W
W/
Max.
Value
360
Unit
/W
Data and specifications subject to change without notice
200712041




Advanced Power Electronics

AP1332EU Datasheet Preview

AP1332EU Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP1332EU
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=600mA
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=400mA
VDS=VGS, ID=250uA
VDS=5V, ID=600mA
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±6V
ID=600mA
VDS=16V
VGS=4.5V
VDS=10V
ID=600mA
RG=3.3Ω,VGS=5V
RD=16.7Ω
VGS=0V
VDS=10V
f=1.0MHz
20 -
-V
- 0.02 - V/
- - 600 mΩ
- - 850 mΩ
0.5 - 1.2 V
-1-S
- - 1 uA
- - 10 uA
- - ±10 uA
- 1.3 2 nC
- 0.3 - nC
- 0.5 - nC
- 21 - ns
- 53 - ns
- 100 - ns
- 125 - ns
- 38 60 pF
- 17 - pF
- 12 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=300mA, VGS=0V
Min. Typ. Max. Unit
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t 10 sec.
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Part Number AP1332EU
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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AP1332EU Datasheet PDF






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Advanced Power Electronics





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