| Part number | AP1333GU |
|---|---|
| Datasheet | AP1333GU_AdvancedPowerElectronics.pdf |
| File Size | 129.53 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Data and specifications subject to change without notice 200822051-1/4 AP1333GU @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max.
See all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP1333GU-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1333GU-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1333U | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1332EU | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1332GEU | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP1332GEU-HF | N-channel Enhancement mode Power MOSFET |
| AP1332GEU-HF-3 | N-channel Enhancement mode Power MOSFET |
| AP13N50I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP13N50I-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP13N50I-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
