AP1333GU Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ± 12 -550 -440 2.5 0.35 0.003 -55 to 150 -55 to 150 Unit V V m A m A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 360 Unit ℃/W .. Data and specifications subject to change without notice 200822051-1/4 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u A Min. -20 -0.5 - Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. 600 800 1000 -1.2 -1 -1 0 ±100 2.7 105.6 - Unit V V/℃ mΩ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1m A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-550m A VGS=-4.5V, ID=-500m A VGS=-2.5V, ID=-300m A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250u A VDS=-5V, ID=-500m A VDS=-20V, VGS=0V VDS=-16V ,VGS=0V VGS=±12V ID=-500m A VDS=-16V VGS=-4.5V VDS=-10V ID=-500m A RG=3.3Ω,VGS=-5V RD=20Ω VGS=0V VDS=-10V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD Parameter Forward On...