AP1333U Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. Data and specifications subject to change without notice 200720041 AP1333U @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max.