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AP1333U
Advanced Power Electronics Corp.
▼ Simple Gate Drive ▼ Small Package Outline ▼ Fast Switching Speed
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S
-20V 800mΩ -550mA
SOT-323 G
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating -20 ± 12 -550 -440 2.5 0.35 0.